cystech electronics corp. spec. no. : c821l3 issued date : 2010.02.05 revised date : page no. : 1/7 BTN853L3 cystek product specification low vcesat npn epitaxial planar transistor BTN853L3 features ? extremely low equivalent on resistance; r ce(sat) 60m ? at 5.2a ? 5.2a continuous collector current (10.4a peak) ? very low saturation voltages ? excellent gain characteristics ? pb-free package symbol outline BTN853L3 b base c collector e emitter sot-223 b c e c bv ceo 60v i d 5.2a r cesat(max) 55m absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6 v collector current (dc) i c 5.2 a collector current (pulse) i cp 10.2 (note 1) 0.7 (note 2) 1.7 (note 3) w power dissipation @ t a =25 c p tot 2 (note 4) junction temperature tj 150 c storage temperature tstg -55~+150 c
cystech electronics corp. spec. no. : c821l3 issued date : 2010.02.05 revised date : page no. : 2/7 BTN853L3 cystek product specification thermal data parameter symbol value unit 179 (note 2) 74 (note 3) thermal resistance, junction-to-ambient, max r th,j-a 63 (note 4) c/w thermal resistance, junction-to-solder point, max r th,j-sp 15 c/w note : 1. single pulse , pw 300 s, duty 2%. 2 . device mounted on an fr4 pcb, single-sided copper, tin plated and standard footprint. 3.device mounted on an fr4 pcb, single-sided copper, tin plated, mounting pad for collector 6 cm 2 . 4.device mounted on a ceramic pcb, al 2 o 3 , standard footprint. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 60 - - v i c =100 a, i e =0 *bv ceo 60 - - v i c =10ma, i b =0 bv ebo 6 - - v i c =100 a, i c =0 i cbo - - 50 na v cb =60v, i e =0 i ebo - - 50 na v eb =6v, i c =0 *v ce(sat) 1 - 25 35 mv i c =500ma, i b =50ma *v ce(sat) 2 - 50 70 mv i c =1a, i b =50ma *v ce(sat) 3 - 95 120 mv i c =1a, i b =10ma *v ce(sat) 4 - 120 150 mv i c =2a, i b =40ma *v ce(sat) 5 - 160 220 mv i c =4a, i b =200ma *v ce(sat) 6 - 150 210 mv i c =4a, i b =400ma *v ce(sat) 7 - 230 305 mv i c =4a, i b =80ma *v ce(sat) 8 - 210 280 mv i c =5.2a, i b =260ma *r ce(sat) 1 - 40 55 m i c =4a, i b =200ma *r ce(sat) 2 - 58 76 m i c =4a, i b =80ma *v be(sat) 1 - 0.8 0.9 v i c =1a, i b =100ma *v be(sat) 2 - 0.94 1.05 v i c =4a, i b =400ma *v be(on) - 0.75 0.85 v v ce =2v, i c =2a *h fe 1 200 - - - v ce =1v, i c =10ma *h fe 2 200 320 500 - v ce =1v, i c =1a *h fe 3 35 - - - v ce =1v, i c =7a f t - 100 - mhz v ce =10v, i c =100ma, f=50mhz cob - 75 - pf v cb =10v, f=1mhz t on - 45 - ns t off - 630 - ns v cc =10v, i c =10i b 1=-10i b 2=1a, r l =10 *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c821l3 issued date : 2010.02.05 revised date : page no. : 3/7 BTN853L3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=5v vce=1v vce=2v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vce(sat) ic=20ib ic=50ib ic=100ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat) @ ic=10ib on vottage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbe(on)@vce=5v grounded emitter output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 0246810 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0ma ib=1ma ib=5ma ib = 8m a grounded emitter output characteristics 0 1 2 3 4 5 6 7 8 012345 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0ma ib=2ma ib=5ma ib = 7m a ib=10ma ib=20m a ib=30ma ib=50m a ib=100ma ib=70ma ib=60ma ib=80ma ib = 90 m a ib = 40 m a
cystech electronics corp. spec. no. : c821l3 issued date : 2010.02.05 revised date : page no. : 4/7 BTN853L3 cystek product specification typical characteristics(cont.) power derating curves 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) see note 4 on page 2 see note 3 on page 2 see note 2 on p a g e 2 ordering information device package shipping marking sot-223 BTN853L3 2500 pcs / tape & reel 853 (pb-free) recommended soldering footprint
cystech electronics corp. spec. no. : c821l3 issued date : 2010.02.05 revised date : page no. : 5/7 BTN853L3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c821l3 issued date : 2010.02.05 revised date : page no. : 6/7 BTN853L3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c821l3 issued date : 2010.02.05 revised date : page no. : 7/7 BTN853L3 cystek product specification sot-223 dimension *: typical 321 f b a c d e g h a1 a2 i style: pin 1.base 2.collector 3.emitter marking: 3-lead sot-223 plastic surface mounted package cystek package code: l3 853 date code : year code : 9 2009;0 2010,?, etc. month code : a,b,c,d,e,f,g ,h,j,k,l,m device name production lot no. : 01~99 inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1142 0.1220 2.90 3.10 g 0.0551 0.0709 1.40 1.80 b 0.2638 0.2874 6.70 7.30 h 0.0098 0.0138 0.25 0.35 c 0.1299 0.1457 3.30 3.70 i 0.0008 0.0039 0.02 0.10 d 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - e *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o f 0.2480 0.2638 6.30 6.70 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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